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2SB1397 - PNP Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

  • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature.
  • Mounted on ceramic board (250mm X0.8mm) 2 Sy.

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Datasheet Details

Part number 2SB1397
Manufacturer Kexin
File Size 69.10 KB
Description PNP Epitaxial Planar Silicon Transistors
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SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1397 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature * Mounted on ceramic board (250mm X0.8mm) 2 Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -25 -20 -6 -2 -4 1.
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