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2SB709A - PNP Transistors

Key Features

  • High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Ju.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type TransistIoCrs Silicon PNP Epitaxial Planar Type 2SB709A Features High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -45 -45 -7 -100 -200 200 150 -55 to +150 Unit V V V mA mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.