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2SB736 - PNP Transistors

Key Features

  • s.
  • High DC current gain hFE:200(TYP).
  • Complimentary to 2SD780. +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol Rating Unit VCBO -60 V.

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SMD Type PNP Transistors 2SB736 Transistors ■ Features ● High DC current gain hFE:200(TYP) ● Complimentary to 2SD780. +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol Rating Unit VCBO -60 VCEO -60 V VEBO -5 IC -300 mA PC 200 mW TJ 150 ℃ Tstg -55 to 150 0-0.1 +0.1 0.38 -0.1 1.Base 2.Emitter 3.