2SB852 Datasheet | Kexin Semiconductor

Features - Darlington connection for high DC current gain. - Built-in 4kΩ resistor between base and emitter. C B RBE 4kΩ +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 Unit: mm 0.1+0.05 -0.01 1 Base 2 Emitter 3 Collector - Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation(TOTAL) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -32 -6 -300 200 150 -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Collector cutoff current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Symbol Test conditions V(BR)CBO Ic= -100μA, IE=0 V(BR)CEO Ic= -1 m A， IB=0 V(BR)EBO IE= -100 μA， IC=0 Ic BO VCB= -24 V , IE=0 IEBO VCE= -4.5V , IC=0 h FE VCE= -5V, IC= -100m A VCE(sat) IC=-200 m A, IB= -0.4m A f T VCE= -5V, IC= -10m A,f=100MHz Cob VCB=-10V, IE=0A, f=1MHz - Marking Marking...