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2SB936A - PNP Transistors

Key Features

  • s.
  • Low collector to emitter saturation voltage VCE(sat).
  • High-speed switching TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 5.55 0.15 -0.15 3.80 Unit: mm + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 + 9.70 0.2 -0.2.
  • Absolute Maximum Ratings Ta = 25℃ 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Base 2 Collector 3 Emitter Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Col.

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SMD Type Transistors PNP Transistors 2SB936A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 5.55 0.15 -0.15 3.80 Unit: mm + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 + 9.70 0.2 -0.2 ■ Absolute Maximum Ratings Ta = 25℃ 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Base 2 Collector 3 Emitter Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous Collector current - Pulse IC -10 A ICP -20 Collector Power Dissipation Tc = 25°C 40 PC W Ta = 25°C 1.