Kexin Electronics 2SC1621
NPN Silicon Transistor
FEATURES
High speed : tstg=20ns MAX. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 40 20 5 200 200 150 -55 to +150 Unit V V V mA mWELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 30V, IE=0 VEB = 4V, IC=0 VCE = 0.5V , IC = 1mA 40 80 0.13 0.74 200 500 3.0 12 See Test Circuit 7 18 6.0 20 20 40 Min Typ Max 100 100 180 0.25 0.85 V V MHz pF ns ns ns Unit nA nA VCE(sat) IC = 10mA , IB = 1mA V...