Kexin Electronics 2SC1653
NPN Silicon Epitaxial Transistor
FEATURES
+0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 High voltage VCEO : 130V +0.1 1.3-0.1 High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating 150 130 5 50 150 125 -55 to +125 Unit V V V mA mWELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Output capacitance Transiston frequency * Pulse test: tp 350 ìs; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = 130V, IE=0 VEB = 5V, IC=0 VCE =3V , IC = 15mA VCE =3V , IC = 1mA VCE(sat) IC = 50mA , IB = 5mA VBE(sat) IC = 50mA , IB = 5mA Cob fT VCB = 10V , IE = 0 , f = 1.0MHz VCE = 10V , IE = -10mA 90 70 200 180 0.1 0.