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2SC3233 - NPN Silicon Triple Diffused Transistor

Datasheet Summary

Features

  • Excellent Switching Times +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 High colletor Breakdown Voltage: VCEO=400V 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Base Current Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage.

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Datasheet Details

Part number 2SC3233
Manufacturer Kexin
File Size 59.90 KB
Description NPN Silicon Triple Diffused Transistor
Datasheet download datasheet 2SC3233 Datasheet
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Full PDF Text Transcription

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SMD Type NPN Silicon Triple Diffused 2SC3233 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Excellent Switching Times +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 High colletor Breakdown Voltage: VCEO=400V 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Base Current Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Rating 500 400 7 2 0.
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