Kexin Electronics 2SC3361
NPN Epitaxial Planar Silicon Transistors
FEATURES
+0.1 2.4-0.1 Fast switching speed. High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 50 5 150 400 40 150 125 -55 to +125 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 1 Free Datasheet SMD Type 2SC3361ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Delay time Rise time Storage time Fall time Symbol IcBO IEBO hFE fT Cob T...