Download 2SC3649 Datasheet PDF
Kexin Semiconductor
2SC3649
Features - High breakdown voltage and large current capacity. - plementary to 2SA1419 1.70 0.1 0.42 0.1 0.46 0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Peak Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM PC TJ Tstg Rating 180 160 6 1.5 2.5 500 150 -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Collector- base breakdown voltage Collector- emitter breakdown voltage VCBO VCEO Ic= 100 μA, IE= 0 Ic= 1 m A,RBE= ∞ Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 Emitter cut-off current IEBO VEB= 4V , IC=0 Collector-emitter saturation voltage VCE(sat) IC=500m A, IB=50m A Base - emitter saturation voltage VBE(sat) IC=500m A, IB=50m A DC current gain VCE= 5V, IC= 100m A h FE VCE= 5V, IC= 10m...