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2SC3661 - Transistor

Key Features

  • +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 30 25 15 300 500 200 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutof.

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SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC3661 SOT-23 Unit: mm Low frequency general-purpose amplifiers, drivers, muting circuit. +0.1 2.4-0.1 Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) High VEBO (VEBO 15V). 0.5V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.