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2SC3734 - NPN Silicon Transistor

Key Features

  • +0.1 2.4-0.1 +0.1 1.3-0.1 High speed : tstg 200ns. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Rating 60 40 6 200 200 Unit V V V mA mW Junction temperature Storage temperature Electrical Characteri.

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SMD Type NPN Silicon Epitaxia 2SC3734 Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 High speed : tstg 200ns. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.