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2SC4132 - NPN Epitaxial Planar Silicon Transistors

Key Features

  • High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz) Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Symbol VCBO VCEO VEBO IC ICP CollectorPower Dissipation Junotion Temperature storage Temperature.
  • 1 Single pulse pw=10ms.
  • 2 When mounted on a 40X40X0.7 mm ceramic board. PC TJ Tstg Rating 120 120 5 2 3 0.5 2 150 -55 to 150 Unit V V V A A.
  • 1 W.
  • 2 W Electrical.

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistors 2SC4132 Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz) Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Symbol VCBO VCEO VEBO IC ICP CollectorPower Dissipation Junotion Temperature storage Temperature *1 Single pulse pw=10ms *2 When mounted on a 40X40X0.7 mm ceramic board. PC TJ Tstg Rating 120 120 5 2 3 0.