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2SC4213 - Silicon NPN Transistor

Key Features

  • High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ. ) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1Ù (typ. ) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package. Transistors IC 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC.

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Full PDF Text Transcription (Reference)

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SMD Type Silicon NPN Epitaxial 2SC4213 Features High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package.