High gain: Gpe = 24dB (typ. ) (f = 200 MHz) Low noise: NF = 2.0dB (typ. ) (f = 200 MHz) Excellent forward AGC characteristics
Transistors IC
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 100 125 -55 to +125 Unit V V V mA mA mW
Electrical Char.
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SMD Type
Silicon NPN Epitaxial 2SC4249
Features
High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.