FEATURES
High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Transistors IC 1 Emitter 2 Base 3 Collector ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 100 125 -55 to +125 Unit V V V mA mA mW ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse transfer capacitance Transition frequency Power gain Noise figure AGC voltage Symbol ICBO IEBO Testconditons VCB = 25 V, IE = 0 VEB = 2 V, IC = 0 30 60 150 0.35 400 20 650 24 2.0 VCC = 12 V, GR = 30dB, f = 200 MHz 3.6 4.4 28 3.2 5.1 300 0.5 pF MHz dB dB V Min Typ Max 100 100 Unit nA nA V V(BR)CEO IC = 1 mA, IB = 0 hFE Cre fT Gpe NF VAGC VCE = 10 V, IC =...