Kexin Electronics 2SC4520
NPN Epitaxial Planar Silicon Transistor
FEATURES
Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 45 5 1.5 3 1.3 150 -55 to +150 Unit V V V A A W 1 Free Datasheet SMD Type 2SC4520ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 45V, IE=0 VEB = 3V, IC=0 VCE = 2V , IC = 100mA VCE = 2V , IC = 100mA VCB = 10V , f = 1.0MHz 100 Min Transistors Ty...