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2SC4521 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation,mounted on ceramic board(250mm2X0.8mm) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 45 5 3 6 1.5 150 -55 to +150 Unit V V V A A W.

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4521 Features Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation,mounted on ceramic board(250mm2X0.8mm) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 45 5 3 6 1.5 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.