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2SC4616 - Silicon NPN Triple Diffused Type Transistor

Key Features

  • Large current calcity (IC=2A) +0.2 9.70 -0.2 High blocking voltage(VCEO 400V) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC=25 Junction temperature Storage temperature Tj Tstg Symbol VCBO.

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Other Datasheets by Kexin Semiconductor

Part Number Description
2SC4615 Silicon NPN Triple Diffused Type Transistor
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SMD Type Transistors Silicon NPN Triple Diffused Type Transistor 2SC4616 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features Large current calcity (IC=2A) +0.2 9.70 -0.2 High blocking voltage(VCEO 400V) +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC=25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 400 400 5 4 2 1 15 150 -55 to +150 Unit V V V A A W W 3 .8 0 www.kexin.com.