Kexin Electronics 2SC4695
NPN Epitaxial Planar Silicon Transistors
FEATURES
3 High reverse hFE (150 typ). Small ON resistance [Ron=1W (IB=5mA)]. +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 20 25 500 800 100 250 150 -55 to +150 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 1 Free Datasheet SMD Type 2SC4695ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 40V, IE=0 VEB = 20V, IC=0 VCE = 5V , IC = 10mA VCE = 10V , IC = 10mA VCB = 10V , f...