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2SC4705 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. 15V. High VEBO : VEBO Small size making it easy to provide high-density, hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation,mounted on ceramic board(250mm2X0.8mm) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC.

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. 15V. High VEBO : VEBO Small size making it easy to provide high-density, hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation,mounted on ceramic board(250mm2X0.8mm) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 50 15 200 300 40 1.3 150 -55 to +150 Unit V V V mA mA mA W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.