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2SC5063 - Silicon NPN triple diffusion planar type Transistor

Key Features

  • High-speed switching High collector to base voltage VCBO +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Wide area of safe operation (ASO) +0.2 9.70 -0.2 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SC5063 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High-speed switching High collector to base voltage VCBO +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Wide area of safe operation (ASO) +0.2 9.70 -0.2 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC=25 Ta=25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VCEO VEBO ICP IC IB PC Rating 500 500 400 7 3 1.5 0.5 25 1.