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2SC5161 - High Voltage Switching Transistor

Key Features

  • Low VCE(sat). VCE(sat) = 0.15V (Typ. ),IC / IB = 1A / 0.2A +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High breakdown voltage. VCEO = 400V Fast switching. tr = 1.0ìs,IC = 0.8A NPN silicon transistor +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base volt.

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SMD Type High Voltage Switching Transistor 2SC5161 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). VCE(sat) = 0.15V (Typ.),IC / IB = 1A / 0.2A +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High breakdown voltage.VCEO = 400V Fast switching.tr = 1.0ìs,IC = 0.8A NPN silicon transistor +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.