FEATURES
High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Transistors ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Peak collector current Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VEBO VCEO ICM IC PC Tj Tstg Rating 30 4 25 1.5 1 500 150 -55 to +150 Unit V V V A A mW ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Colllector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Gain bandwidth product Symbol Testconditons Min 30 4 25 1 1 55 300 0.5 100 V MHz Typ Max Unit V V V ìA ìA V(BR)CBO IC=10ìA,IE=0 V(BR)EBO IE=10ìA,IC=0 V(BR)CEO IC=100ìA,RBE= ICBO IEBO hFE VCB=25V,IE=0 VEB=2V,IC=0 VCE=1V,IC=500mA VCE(sat) IC=500mA,IB=25mA fT VCE=6V,IE=-10mA hFE Classif...