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2SC5310 - NPN Epitaxial Planar Silicon Transistors

Key Features

  • 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation.
  • Jumction temperature Storage temperature.
  • Mounted on a glass-epoxy board (20×30×1.6mm) Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 30 25 6 1 3 200 250 150 -55 to +150 Unit V V V A A.

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SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC5310 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products. +0.1 0.38-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation * Jumction temperature Storage temperature * Mounted on a glass-epoxy board (20×30×1.