Kexin Electronics 2SC5310
NPN Epitaxial Planar Silicon Transistors
FEATURES
1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation * Jumction temperature Storage temperature * Mounted on a glass-epoxy board (20×30×1.6mm) Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 30 25 6 1 3 200 250 150 -55 to +150 Unit V V V A A mA mW 0-0.1 1 Free Datasheet SMD Type 2SC5310ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Storage time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20V, IE=0 VEB = 3V, IC=0 VCE =2V , IC = 100mA VCE = 10V , IC = 50mA...