Datasheet4U.com

2SC5356 Datasheet PDF

Kexin Electronics 2SC5356

Silicon NPN Transistor

Part No. 2SC5356
Datasheet 2SC5356 Download
Manufacturer Kexin Electronics
Description Silicon NPN Transistor
Buy Stock & Price
2SC5356 datasheet page 1 preview

FEATURES

High collectors breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A) +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 900 800 7 3 5 1 1.5 25 150 -55 to +150 A W Unit V V V A 3 .8 0 Excellent switching times: tf = 0.5 ìs (max) (IC = 1.2 A) 1 Free Datasheet SMD Type 2SC5356

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Swi...
2SC5356 page 2 preview