2SD1583-Z
Features
Low VCE(sat). High h FE.
Transistors
NPN Silicon Epitaxial Transistor 2SD1583-Z
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+ 1.50 0.15 -0.15
+ 0 .1 5 5 .5 5 -0.15
+ 9.70 0.2 -0.2
0.80+0.1 -0.1
0.127 max
+0 2.65 .25 -0.1
+0 0.50 .15 -0.15
+0 1.50 .28 -0.1
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current (DC)
Collector Current...
