2SD1611 Datasheet PDF

FEATURES

High forward current transfer ratio hFE High collector-base voltage (Emitter open) VCBO + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm + 1.50 0.15 -0.15 + 0 .1 5 5 .5 5 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0 2.65 .25 -0.1 +0 0.50 .15 -0.15 +0 1.50 .28 -0.1 Internal Connection 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 1 Base 2 Collector 3 Emitter

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25 Junction temperature Storage temperature Symbol Rating Unit VCBO 500 V VCEO 400 V VEBO 5 V IC 6 A ICP 10 A 40 A PC 1.3 W Tj 150 Tstg -55 to +150 1 SMD Type 2SD1611 Transistors

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Emitter-base voltage (Collector open) Collector-emitter sustaining voltage* Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency *.