2SD1719 - Silicon NPN Triple Diffusion Planar Type Transistor
Kexin Semiconductor
Key Features
High forward current transfer ratio hFE which has satisfactory linearity High emitter-base voltage (Collector open) VEBO
+ 9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
+ 1.50 0.15 -0.15
0.80+0.1 -0.1
0.127 max
+ 0.15 0 .5 0 -0.15
+ 0.28 1 .5 0 -0.1
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Coll.
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SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1719 Features High forward current transfer ratio hFE which has satisfactory linearity High emitter-base ...
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transfer ratio hFE which has satisfactory linearity High emitter-base voltage (Collector open) VEBO + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 + 1.50 0.15 -0.15 0.80+0.1 -0.1 0.127 max + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Junction temperature Storage temperature Symbol Rating Unit VCBO 100 V VCEO 60 V VEBO 15 V IC 6 A ICP 12 A IB 3 A 40 W PC 1.
2SD1719 Datasheet
