Download 2SD2150 Datasheet PDF
Kexin Semiconductor
2SD2150
Features - Excellent current-to-gain characteristics - Low collector saturation voltage VCE(sat) - plementary to 2SB1412 1.70 0.1 0.42 0.1 0.46 0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol Rating Unit VCBO VCEO VEBO 500 m W ℃ Tstg -55 to 150 1.Base 2.Collector 3.Emitter - Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100u A, IE= 0 VCEO Ic= 1 m A, IB= 0 VEBO IE= 100u A, IC= 0 ICBO VCB= 35 V , IE= 0 IEBO VEB= 5V ,...