Download 2SD2211 Datasheet PDF
Kexin Semiconductor
2SD2211
Features - Collector Current Capability IC=1.5A - Collector Emitter Voltage VCEO=160V 1.70 0.1 0.42 0.1 0.46 0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Symbol VCBO VCEO VEBO IC ICP Collector Power Dissipation Junction Temperature Storage Temperature Range PC (Note.1) TJ Tstg Note.1 :Mounted on a 40×40× 0.7mm ceramic substrate Rating Unit 1.5 A 0.5 W 150 ℃ -55 to 150 Unit:mm 1.Base 2.Collector 3.Emitter - Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA, IE= 0 VCEO Ic= 1 m A,IB=...