2SD2351
Features
High DC current gain. High emitter-base voltage. (VCBO=12V) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50m A/5m A)
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation Junction temperature Storage temperature
- Single pulse Pw=100ms.
Symbol VCBO VCEO VEBO
PC Tj Tstg
Rating 60 50 12 0.15 0.2 0.2 150
-55 to +150
Unit V V V
A(DC) A(Pulse)-
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency
Symbol
Testconditons
BVCBO IC=10ìA
BVCEO IC=1m A
BVEBO IE=10ìA
ICBO VCB=50V
IEBO VEB=12V
VCE(sat) IC/IB=50m A/5m A h FE VCE/IC=5V/1m A f T VCE=5V, IE=-10m A, f=100MHz
Cob VCB=5V, IE=0A, f=1MHz
Min...
