Download 2SD875 Datasheet PDF
Kexin Semiconductor
2SD875
Features - Large collector power dissipation PC. - High collector to emitter voltage VCEO. - plimentary to 2SB767 1.70 0.1 0.42 0.1 0.46 0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol Rating Unit VCBO VCEO VEBO ℃ Tstg -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA, IE= 0 VCEO Ic= 1 m A, IB= 0 VEBO IE= 100μA, IC= 0 ICBO VCB= 60V , IE=...