Kexin Electronics 2SD968
Silicon NPN Transistor
FEATURES
High collector to emitter voltage VCEO. Large collector power dissipation PC.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector to base voltage 2SD968 2SD968A Collector to emitter voltage 2SD968 2SD968A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 2 Symbol VCBO Rating 100 120 Unit V V V V V A A W VCEO VEBO ICP IC PC * Tj Tstg 100 120 5 1 0.5 1 150 -55 to 150 * Printed circuit board: Copper foil area of 1cm or more, and the board thickness of 1.7mm for the collector portion 1 Free Datasheet SMD Type 2SD968, 2SD968AELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector to emitter voltage 2SD968 2SD968A Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance * Pulse measurement Symbol VCEO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Testconditons IC = 100ìA, IB = 0 IC = 1...