Kexin Electronics 2SJ181S
P-Channel MOSFET
| Part No. | 2SJ181S |
|---|---|
| Datasheet | 2SJ181S Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-600V● ID =-0.5 A (VGS =-10V)
● RDS(ON) ＜ 25Ω (VGS =-10V) D
● High speed switching
● Low drive current G S +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.80+0.1 -0.1 0.127 m ax + 0.50 0.15 -0.15 + 1.50 0.28 -0.1 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 2.65 0.25 -0.1 +0 5.55 .15 -0.15 3.80 Unit: mm 1 Gate 2 Drain 3 Source 4 Drain
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Body to Drain Diode Reverse Drain Current Power Dissipation Tc = 25℃ Junction Temperature Junction Storage Temperature Range Symbol Rating Unit VDS -600 V VGS ±15 ID -0.5 IDM -1 A IDR -0.5 PD 20 W TJ 150 ℃ Tstg -55 to 150 Note.1: PW ≤ 10 us, duty cycle ≤ 1%●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Gate to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate to Source Cutof...
