2SJ185 Datasheet | Kexin Semiconductor

Features - VDS (V) =-50V - ID =-0.1 A (VGS =-4V) - RDS(ON) ＜ 20Ω (VGS =-4V) - RDS(ON) ＜ 40Ω (VGS =-2.5V) - p;ementary to 2SK1399 P-Channel MOSFET 2SJ185 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 +0.12.4 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.10.38 -0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Operating Temperature Junction Storage Temperature Range Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% Symbol VDS VGS ID IDM PD TJ Topt Tstg Rating -50 ±7 -100 -200 200 150 -55 to 80 -55 to 150 Unit V m A m W ℃ - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Symbol VDSS IDSS IGSS Test Conditions ID=-250μA, VGS=0V VDS=-50V, VGS=0V VDS=0V, VGS=±7V Min Typ Max Unit -50 V -10 u A ±5 u A Gate Cut off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS(off) RDS(On) g FS Ciss Coss Crss td(on) tr td(off) tf VDS=-3V,ID=-1u A VGS=-2.5V, ID=-1m A VGS=-4V, ID=-10m A VDS=-3V, ID=-10m...