2SJ197 Datasheet | Kexin Semiconductor

Features - VDS (V) =-60V - ID =-1.5 A - RDS(ON) ＜ 1Ω (VGS =-10V) - RDS(ON) ＜ 1.5Ω (VGS =-4V) - p;ementary to 2SK1483 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% Symbol Rating Unit -60 ±20 ℃ Tstg -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Cut off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol Test Conditions Min VDSS ID=-250μA, VGS=0V -60 IDSS VDS=-60V, VGS=0V IGSS VDS=0V, VGS=±20V VGS(off) VDS=-10V,ID=-1m...