2SJ199 Datasheet | Kexin Semiconductor

Features - VDS (V) =-100V - ID =-1 A (VGS =-10V) - RDS(ON) ＜ 2Ω (VGS =-10V) - RDS(ON) ＜ 2.5Ω (VGS =-4V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Tc = 25℃ Junction Temperature Junction Storage Temperature Range Note.1: PW ≤ 10 ms, duty cycle ≤ 50% Symbol VDS VGS ID IDM PD TJ Tstg Rating -100 ±20 -1 -2 2 150 -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate to Source Cutoff Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol VDSS IDSS IGSS VGS(off) RDS(On) g FS Ciss Coss Crss td(on) tr td(off) tf Test Conditions ID=-250μA, VGS=0V VDS=-100V, VGS=0V VDS=0V, VGS=±20V VGS=-10V ID=-1m A VGS=-10V, ID=-0.5A VGS=-4V, ID=-0.5A VDS=-10V, ID=-0.5A VGS=0V, VDS=-10V, f=1MHz VGS(on)=-10V, ID=-0.5A, RL=50Ω,RG=10 Ω,VDD=-25V, - Marking Marking Unit V A W ℃ Min Typ Max...