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2SJ302 - Mos Field Effect Power Transistor

Key Features

  • Low on-state resistance RDS(on) 0.1 (VGS=-10V,ID=-8A) RDS(on) 0.24 (VGS=-4V,ID=-6A) Low Ciss Ciss=1200PF TYP. Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse).
  • Power dissipation Channel temperature Storage temperature.
  • PW 10 s; d 1%. Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance In.

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SMD Type MOSFET Mos Field Effect Power Transistor 2SJ302 Features Low on-state resistance RDS(on) 0.1 (VGS=-10V,ID=-8A) RDS(on) 0.24 (VGS=-4V,ID=-6A) Low Ciss Ciss=1200PF TYP. Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s; d 1%.