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2SJ3021 - P-Channel Enhancement MOSFET

Key Features

  • ƽ VDS (V) =-30V ƽ ID =-4.2 A (VGS =-10V) ƽ RDS(ON) ˘ 50m¡ (VGS =-10V) ƽ RDS(ON) ˘ 65m¡ (VGS =-4.5V) D ƽ RDS(ON) ˘ 120m¡ (VGS =-2.5V) G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25ć Ta = 70ć Pulsed Drai.

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SMD Type P-Channel Enhancement MOSFET 2SJ3021 MOSFET Ƶ Features ƽ VDS (V) =-30V ƽ ID =-4.2 A (VGS =-10V) ƽ RDS(ON) ˘ 50m¡ (VGS =-10V) ƽ RDS(ON) ˘ 65m¡ (VGS =-4.5V) D ƽ RDS(ON) ˘ 120m¡ (VGS =-2.5V) G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25ć Ta = 70ć Pulsed Drain Current Power Dissipation Ta = 25ć Ta = 70ć Thermal Resistance.Junction- to-Ambient t İ 10s Thermal Resistance.Junction- to-Ambient Thermal Resistance.