Kexin Electronics 2SJ3021
P-Channel Enhancement MOSFET
| Part No. | 2SJ3021 |
|---|---|
| Datasheet | 2SJ3021 Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
ƽ VDS (V) =-30V ƽ ID =-4.2 A (VGS =-10V) ƽ RDS(ON) ˘ 50m¡ (VGS =-10V) ƽ RDS(ON) ˘ 65m¡ (VGS =-4.5V) D ƽ RDS(ON) ˘ 120m¡ (VGS =-2.5V) G S +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain ƵABSOLUTE MAXIMUM RATINGS
Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25ć Ta = 70ć Pulsed Drain Current Power Dissipation Ta = 25ć Ta = 70ć Thermal Resistance.Junction- to-Ambient t İ 10s Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Rating -30 ±12 -4.2 -3.5 -30 1.4 1 90 125 60 150 -55 to 150 Unit V A W ć/W ć 1 SMD Type MOSFET P-Channel Enhancement MOSFET 2SJ3021 ŶELECTRICAL CHARACTERISTICS
Ta = 25ć Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage...
