2SK1151S
2SK1151S is Silicon N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
+0.2 9.70 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+0.15 1.50 -0.15
+0.15 5.55 -0.15
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+0.15 0.50 -0.15
+0.28 1.50 -0.1
+0.25 2.65 -0.1
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse)
- Power dissipation Channel temperature Storage temperature
- PW 10 s, duty cycle 1%
Symbol VDSS VGSS ID ID PD Tch Tstg
Rating 450 30 1.5 6 20 150
-55 to +150
Electrical Characteristics Ta = 25
Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Symbol
Testconditons
VDSS ID=10m A,VGS=0
VGSS ID= 100 A,VDS=0
IDSS VDS=360V,VGS=0
IGSS VGS= 25V,VDS=0
VGS(off) VDS=10V,ID=1m A
Yfs VDS=20V,ID=1A
RDS(on) VGS=10V,ID=1A
Ciss...
