Datasheet4U Logo Datasheet4U.com

2SK1284-Z - N-Channel MOSFET

Key Features

  • Low on-state resistance RDS(on) 0.32 . @VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +1.50 0.15 -0.15 3.80 +5.55 0.15 -0.15 + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.252 .6 5 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gat.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1284-Z Power MOSFET NEC
2SK1284 Power MOSFET NEC
2SK128 N-Channel MOSFET Panasonic Semiconductor
2SK1280 N-Channel MOS-FET Fuji Electric
2SK1280 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK1284 MOS Field Effect Power Transistor
2SK1254S Silicon N-Channel MOSFET
2SK1273 N-Channel MOSFET
2SK1133 N-Channel MOSFET
2SK1151S Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET 2SK1284-Z MOSFICET Features Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm +1.50 0.15 -0.15 3.80 +5.55 0.15 -0.15 + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.252 .6 5 -0.