Datasheet4U Logo Datasheet4U.com

2SK1483 - MOS Field Effect Transistor

Key Features

  • Can be driven directly an IC operating with a 5V single power supply. Low ON-state resistance RDS(on)=0.8 MAX. At VGS=4V,ID=0.5A RDS(on)=0.4 MAX. At VGS=10V,ID=0.5A SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse).
  • Power dissipation Channel tem.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1483 N-CHANNEL MOS FET NEC
2SK1483C N-CHANNEL MOSFET FOR SWITCHING Renesas
2SK1482 N-Channel MOSFET NEC
2SK1482 N-Channel MOSFET Renesas
2SK1484 N-CHANNEL MOS FET NEC

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK1133 N-Channel MOSFET
2SK1254S Silicon N-Channel MOSFET
2SK1273 N-Channel MOSFET
2SK1284 MOS Field Effect Power Transistor
2SK1284-Z N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFET MOS Field Effect Transistor 2SK1483 Features Can be driven directly an IC operating with a 5V single power supply. Low ON-state resistance RDS(on)=0.8 MAX. At VGS=4V,ID=0.5A RDS(on)=0.4 MAX. At VGS=10V,ID=0.5A SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 30 20 2.0 4.0 2.