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2SK1584 - MOS Field Effect Transistor

Key Features

  • Directly driven by Ics having a 5V P Has low on-state resistance RDS(on)=2.0 MAX. @VGS=4.0V,ID=0.3A RDS(on)=1.5 MAX. @VGS=10V,ID=0.3A SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 MOSFET Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse).
  • Power dissipation Channel temperature Storage temperatur.

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SMD Type MOS Field Effect Transistor 2SK1584 Features Directly driven by Ics having a 5V P Has low on-state resistance RDS(on)=2.0 MAX.@VGS=4.0V,ID=0.3A RDS(on)=1.5 MAX.@VGS=10V,ID=0.3A SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 MOSFET Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 30 20 0.5 1.0 2.