FEATURES
Directly driven by Ics having a 5V P Has low on-state resistance RDS(on)=2.0 MAX.@VGS=4.0V,ID=0.3A RDS(on)=1.5 MAX.@VGS=10V,ID=0.3A SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 MOSFET Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 30 20 0.5 1.0 2.0 150 -55 to +150 ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol Testconditons IDSS VDS=30V,VGS=0 IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=0.1mA Yfs VDS...