Datasheet4U Logo Datasheet4U.com

2SK1586 - MOS Field Effect Transistor

Key Features

  • Directly driven by Ics having a 3V power supply. Has low on-state resistance RDS(on)=1.0 MAX. @VGS=4.0V,ID=0.5A RDS(on)=0.6 MAX. @VGS=10V,ID=0.5A SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 MOSFET Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse).
  • Power dissipation Channel temperature Stora.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1586 N-Channel MOSFET NEC
2SK1580 Switching N-Channel MOS FET NEC
2SK1581 N-Channel MOS FET NEC
2SK1581C N-Channel MOSFET Renesas
2SK1582 N-CHANNEL MOS FET NEC

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK1581 N-Channel MOSFET
2SK1582 N-Channel MOSFET
2SK1583 MOS Field Effect Transistor
2SK1584 MOS Field Effect Transistor
2SK1585 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOS Field Effect Transistor 2SK1586 Features Directly driven by Ics having a 3V power supply. Has low on-state resistance RDS(on)=1.0 MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.6 MAX.@VGS=10V,ID=0.5A SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 MOSFET Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 30 20 1.0 2.0 2.