Datasheet4U Logo Datasheet4U.com

2SK1593 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 0.5A.
  • RDS(ON) ＜ 6Ω (VGS = 4V).
  • RDS(ON) ＜ 5Ω (VGS = 10V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ±20 Continuous Drain Current Pulsed Drain Current (Note.1) ID 0.5 A IDM 1 Power Dissipation PD 2 W Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Note.1: PW ≤ 10ms,Du.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1593 100V N-Channel MOSFET VBsemi
2SK1593 N-Channel MOSFET NEC
2SK1590 MOSFET NEC
2SK1591 N-Channel MOSFET NEC
2SK1592 N-Channel MOSFET NEC

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK1590 N-Channel MOSFET
2SK1592 N-Channel MOSFET
2SK1581 N-Channel MOSFET
2SK1582 N-Channel MOSFET
2SK1583 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET 2SK1593 MOSFET ■ Features ● VDS (V) = 100V ● ID = 0.5A ● RDS(ON) ＜ 6Ω (VGS = 4V) ● RDS(ON) ＜ 5Ω (VGS = 10V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ±20 Continuous Drain Current Pulsed Drain Current (Note.1) ID 0.5 A IDM 1 Power Dissipation PD 2 W Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Note.