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2SK2133 - MOS Field Effect Transistor

Key Features

  • Low on-resistance RDS(on)=0.21 MAX. @VGS=10V,ID=8.0A Low Ciss Ciss=1090 pF TYP. High avalanche capabil + 5.28 0.2 -0.2 + 8.7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 0 .1 1 . 2 7 -0.1 5.60 +0.2 5 -0.2 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 0 .2 2 . 5 4 -0.2 0.4+0.2 -0.2 1 5 . 2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=2.

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SMD Type MOSFICET MOS Field Effect Power Transistor 2SK2133 Features Low on-resistance RDS(on)=0.21 MAX.@VGS=10V,ID=8.0A Low Ciss Ciss=1090 pF TYP. High avalanche capabil + 5.28 0.2 -0.2 + 8.7 0.2 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm + 0 .1 1 . 2 7 -0.1 5.60 +0.2 5 -0.2 1.27+0.1 -0.1 0.1max +0.2 2.54-0.2 +0.1 5.08-0.1 0.81+0.1 -0.1 2.54 + 0 .2 2 . 5 4 -0.2 0.4+0.2 -0.2 1 5 .