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2SK2869-ZJ - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 20 A (VGS = 10V).
  • RDS(ON) ＜ 45mΩ (VGS = 10V).
  • RDS(ON) ＜ 70mΩ (VGS = 4V).
  • High speed switching D G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Body to Drain Diode Reverse Drain Current Avalanche Current (Note.2) Power Dissipation (Note.3) Avalanche Energy (Note.2) Junction Temperature Storage Temperature Range Symbol Rating Unit.

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SMD Type N-Channel MOSFET 2SK2869-ZJ MOSFET ■ Features ● VDS (V) = 60V ● ID = 20 A (VGS = 10V) ● RDS(ON) ＜ 45mΩ (VGS = 10V) ● RDS(ON) ＜ 70mΩ (VGS = 4V) ● High speed switching D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Body to Drain Diode Reverse Drain Current Avalanche Current (Note.2) Power Dissipation (Note.3) Avalanche Energy (Note.2) Junction Temperature Storage Temperature Range Symbol Rating Unit VDS 60 V VGS ±20 ID 20 IDM 80 A IDR 20 IAR 20 PD 30 W EAR 34 mJ TJ 150 ℃ Tstg -55 to 150 Note.1: PW ≤ 10us, duty cycle ≤ 1 % Note.2: Value at Tch = 25°C, Rg ≥ 50 Ω Note.3: Value at Tc = 25°C www.kexin.com.