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2SK3022 - Silicon N-Channel Power F-MOSFET

Key Features

  • Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive High electrostatic breakdown voltage +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25.

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SMD Type MOSFICET Silicon N-Channel Power F-MOSFET 2SK3022 Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive High electrostatic breakdown voltage +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.