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2SK3025 - Silicon N-Channel Power F-MOSFET

Key Features

  • Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive High electrostatic breakdown voltage Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshol.

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SMD Type MOSFICET Silicon N-Channel Power F-MOSFET 2SK3025 Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive High electrostatic breakdown voltage Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time TO-252 6.50+0.15 -0.15 5.30+0.