2SK3479
Features
Super low on-state resistance: RDS(on)1 = 11 m RDS(on)2 = 13 m MAX. (VGS = 10 V, ID = 42 A)
+0.2 8.7-0.2
MAX. (VGS = 4.5 V, ID = 42 A)
Low Ciss: Ciss = 11000 p F TYP. Built-in gate protection diode
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28-0.2
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature
- PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp
- PD Rating 100 20 83 332 125 1.5 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge...
